Product specification
SPECIFICATIONS
Deep UV core material · Sapphire / AlN epitaxial wafer / template
WAlN-SA400
2~3 μm，(002) ≤ 80 arcsec，(102) ≤ 400 arcsec
Hubei DUVTek Co., Ltd.
Hubei DUVTek Co., LTD.
B08, East Lake high tech creative city, Phoenix Road, 9, Wu Tong Hu, Ezhou, Hubei
Building B08, Donghu High-tech Innovation City, No. 9 Fenghuang Avenue, Wutong Lake New District, Ezhou, Hubei, China
| Performance properties | Parameter value |
|---|---|
| Diameter | 2 inch (50.8±0.05 μm) |
| Substrate type | Sapphire |
| Substrate thickness | 430±20 μm |
| Epilayer thickness | 2~3 μm |
| (002) crystal quality (FWHM of 002 XRC) | ≤ 80 arcsec |
| (102) crystal quality (FWHM of 102 XRC) | ≤ 400 arcsec |
| Front side roughness | ≤ 1 nm |
| Edge exclusion | ≤ 3 mm |
| Through crack | none |
| Surface orientation of a-plane | 0°±0.1° |
| Surface orientation of m-plane | 0.2°±0.1° |
| Primary flat orientation | a-plane±0.1° |
| Primary flat length | 16±1 mm |
| Back side roughness | 0.8±0.2 μm |